SDP:010117A Hall bar with VH=-6.241509 mV at 10 mA and 0.5 T is n-type with mu=1000 cm^2/(V s)Semiconductor Hall Coefficient SignSemiconductor Resistivity Mobility From HallPrivateLabels unavailablePrivate saving unavailableBand structure, density of states, and carrier statisticsSemiconductor Device Physics · Mixed reviewProgress not loaded
SDP:010118An 850 nm, 1 mW slab with R=0.30 and alpha=1000 cm^-1 generates 2.9951634e15 pairs/sSemiconductor Photon Energy Absorption FractionSemiconductor Volume Average Generation CurrentPrivateLabels unavailablePrivate saving unavailableBand structure, density of states, and carrier statisticsSemiconductor Device Physics · Mixed reviewProgress not loaded
SDP:010219Matthiessen 1500(T/300)^-2.3 and 500(T/300)^1.5 is nonmonotonic: 375, 385.9433, 250.6166Semiconductor Matthiessen Inverse SumSemiconductor Mobility Temperature CompetitionPrivateLabels unavailablePrivate saving unavailableDrift, diffusion, recombination, and Poisson couplingSemiconductor Device Physics · Mixed reviewProgress not loaded
SDP:010220TLM R=30 Ohm at 10 um and 70 Ohm at 50 um extracts Rsheet=100 Ohm/sq and rhoc=1e-4 Ohm cm^2Semiconductor Tlm Sheet And ContactSemiconductor Transfer Length Specific ContactPrivateLabels unavailablePrivate saving unavailableDrift, diffusion, recombination, and Poisson couplingSemiconductor Device Physics · Mixed reviewProgress not loaded
SDP:010221SRH at n=p=1e15 cm^-3 with 2 us lifetimes is U=2.499975e20, within 1e-5 of 2.5e20Semiconductor Srh Net RecombinationSemiconductor High Injection Lifetime SumPrivateLabels unavailablePrivate saving unavailableDrift, diffusion, recombination, and Poisson couplingSemiconductor Device Physics · Mixed reviewProgress not loaded
SDP:010322Two high-forward decades at 300 K extract n=1.5, Is=6.92263 pA, and rd=3.87780 kOhm at 10 uASemiconductor PN Ideality ExtractionSemiconductor Forward Incremental ResistancePrivateLabels unavailablePrivate saving unavailablePN junction electrostatics and current-voltage behaviorSemiconductor Device Physics · Mixed reviewProgress not loaded
SDP:010323A 0.8 eV Schottky at 300 K has Js=3.9265873e-7 A/cm2 and a 0.10 eV barrier drop multiplies Js by 47.8549Semiconductor Schottky Richardson CurrentSemiconductor Barrier Height SensitivityPrivateLabels unavailablePrivate saving unavailablePN junction electrostatics and current-voltage behaviorSemiconductor Device Physics · Mixed reviewProgress not loaded
SDP:010324The ideal 35 mA cell has Voc=0.5388857 V, Vmp=0.4536147 V, Imp=32.75959 mA, and FF=0.7878816Semiconductor Solar Cell Voc MppSemiconductor Fill Factor Ideal DiodePrivateLabels unavailablePrivate saving unavailablePN junction electrostatics and current-voltage behaviorSemiconductor Device Physics · Mixed reviewProgress not loaded
SDP:010325An 850 nm photodiode at 100 uW has R=0.548457 A/W, RSS noise 4.38553 nA, and current SNR=12506.1Semiconductor Photodiode ResponsivitySemiconductor Shot Thermal Current NoisePrivateLabels unavailablePrivate saving unavailablePN junction electrostatics and current-voltage behaviorSemiconductor Device Physics · Mixed reviewProgress not loaded
SDP:010330One-sided Ec=3e5 V/cm toy breaks at W=1.939749 um and VBR=29.09623 VSemiconductor Avalanche Critical FieldSemiconductor Onesided Breakdown VoltagePrivateLabels unavailablePrivate saving unavailablePN junction electrostatics and current-voltage behaviorSemiconductor Device Physics · Mixed reviewProgress not loaded
SDP:010427High-frequency MOS C-V on 20 nm oxide reaches Cmin=2.163166 pF and ratio 0.1252872View access optionsSemiconductor Mos High Frequency CVSemiconductor Max Depletion Series CminPrivateLabels unavailablePrivate saving unavailableMOS capacitors and MOSFET electrostaticsSemiconductor Device Physics · Mixed reviewProgress not loaded
SDP:010526A 450 nm 20 mA / 3 V LED at 20 mW optical has EQE=0.3629495, extraction=0.4536868, and wall-plug 1/3View access optionsSemiconductor Led External Quantum EfficiencySemiconductor Led Wallplug ExtractionPrivateLabels unavailablePrivate saving unavailableBipolar and heterojunction device modelsSemiconductor Device Physics · Mixed reviewProgress not loaded
SDP:010529WB=0.50 um base transit of 50 ps sets fT=1.98944 GHz; half WB raises fT by 1.88235View access optionsSemiconductor Bjt Base Transit TimeSemiconductor Unity Gain FrequencyPrivateLabels unavailablePrivate saving unavailableBipolar and heterojunction device modelsSemiconductor Device Physics · Mixed reviewProgress not loaded
SDP:010531Qc=0.65 well screen keeps E2=0.2244956 eV under 0.26 eV by 35.5044 meVView access optionsSemiconductor Heterojunction Band OffsetSemiconductor Infinite Well ScreenPrivateLabels unavailablePrivate saving unavailableBipolar and heterojunction device modelsSemiconductor Device Physics · Mixed reviewProgress not loaded
SDP:010628Declared FN J=1e-6 E^2 exp(-25/E) rises by 2.184331 from 10 to 12 MV/cmView access optionsSemiconductor Fowler Nordheim CurrentSemiconductor Oxide Field TO VoltagePrivateLabels unavailablePrivate saving unavailableBreakdown, short-channel effects, noise, and scaling limitsSemiconductor Device Physics · Mixed reviewProgress not loaded